| PART |
Description |
Maker |
| GS8161Z36T-133 GS8161Z36T-133I GS8161Z36T-133T GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| CY7C192-15VXC |
64K x 4 Static RAM with Separate IO; Density: 256 Kb; Organization: 64Kb x 4; Vcc (V): 4.5 to 5.5 V; 64K X 4 STANDARD SRAM, 15 ns, PDSO28
64 K × 4 Static RAM with Separate IO CMOS for optimum speed/power
|
Cypress Semiconductor, Corp.
|
| STR7101 STR7000 |
(STR7101 - STR7103) Separate Excitation Switching Type
(STR7000 - STR7003) Separate Excitation Switching Type
|
Sanken electric
|
| GS8170LW36AC |
18Mb B>1x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM
|
GSI Technology, Inc.
|
| SI-8050S SI-8150S SI-8000S SI-8090S SI-8120S SI-80 |
3 A SWITCHING REGULATOR, 60 kHz SWITCHING FREQ-MAX, PSFM5
Full-Mold Separate Excitation Switching Type
Full-Mold, Separate Excitation Switching Type
Full-Mold/ Separate Excitation Switching Type
|
SANKEN[Sanken electric]
|
| GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300 |
18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb B>1x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI Technology
|
| STA802M STA801 STA801M SANKENELECTRICCOLTD-STA801M |
2-Output Separate Excitation Step-down Switching Mode
2-OUTPUT SEPARATE EXCITATION SWITCHING TYPE
|
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| GS8160F32T-6I GS8160F18T-8.5 GS8160F36T-8.5I GS816 |
6ns 512K x 32 18MB synchronous burst SRAM
8.5ns 1M x 18 18MB synchronous burst SRAM
8.5ns 512K x 36 18MB synchronous burst SRAM
8.5ns 512K x 32 18MB synchronous burst SRAM
|
GSI Technology
|
| GS8170LW36AC-300I GS8170LW72AC-300 GS8170LW36AC-33 |
512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb ??x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
| GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 4.5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
|
GSI Technology, Inc.
|
| GS816118 GS816136 |
18Mb Burst SRAMs
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI Technology
Electronic Theatre Controls, Inc.
|
